IPI50N10S3L-16 vs IPP50N10S3L-16 feature comparison

IPI50N10S3L-16 Infineon Technologies AG

Buy Now Datasheet

IPP50N10S3L-16 Infineon Technologies AG

Buy Now Datasheet
Pbfree Code Yes Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Part Package Code TO-262AA TO-220AB
Package Description IN-LINE, R-PSIP-T3 FLANGE MOUNT, R-PSFM-T3
Pin Count 3 3
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon Infineon
Avalanche Energy Rating (Eas) 330 mJ 330 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 100 V
Drain Current-Max (ID) 50 A 50 A
Drain-source On Resistance-Max 0.0209 Ω 0.0209 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 95 pF 95 pF
JEDEC-95 Code TO-262AA TO-220AB
JESD-30 Code R-PSIP-T3 R-PSFM-T3
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 100 W 100 W
Pulsed Drain Current-Max (IDM) 200 A 200 A
Qualification Status Not Qualified Not Qualified
Reference Standard AEC-Q101; IEC-68-1 AEC-Q101; IEC-68-1
Surface Mount NO NO
Terminal Finish Tin (Sn) Tin (Sn)
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Element Material SILICON SILICON
Base Number Matches 1 1

Compare IPI50N10S3L-16 with alternatives

Compare IPP50N10S3L-16 with alternatives