IPI50N10S3L16AKSA1 vs SUP50N10-21P-GE3 feature comparison

IPI50N10S3L16AKSA1 Infineon Technologies AG

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SUP50N10-21P-GE3 Vishay Intertechnologies

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG VISHAY INTERTECHNOLOGY INC
Package Description GREEN, PLASTIC, TO-262, 3 PIN FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer Infineon Vishay
Avalanche Energy Rating (Eas) 330 mJ 80 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 100 V
Drain Current-Max (ID) 50 A 50 A
Drain-source On Resistance-Max 0.0209 Ω 0.021 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 95 pF
JEDEC-95 Code TO-262AA TO-220AB
JESD-30 Code R-PSIP-T3 R-PSFM-T3
JESD-609 Code e3 e3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 100 W
Pulsed Drain Current-Max (IDM) 200 A 60 A
Reference Standard AEC-Q101; IEC-68-1
Surface Mount NO NO
Terminal Finish Tin (Sn) Matte Tin (Sn)
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Pbfree Code Yes
Moisture Sensitivity Level 1
Transistor Application SWITCHING

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