IPI50N10S3L16AKSA1
vs
SUP50N10-21P-GE3
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
VISHAY INTERTECHNOLOGY INC
|
Package Description |
GREEN, PLASTIC, TO-262, 3 PIN
|
FLANGE MOUNT, R-PSFM-T3
|
Reach Compliance Code |
not_compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Factory Lead Time |
4 Weeks
|
|
Samacsys Manufacturer |
Infineon
|
Vishay
|
Avalanche Energy Rating (Eas) |
330 mJ
|
80 mJ
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
100 V
|
100 V
|
Drain Current-Max (ID) |
50 A
|
50 A
|
Drain-source On Resistance-Max |
0.0209 Ω
|
0.021 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss) |
95 pF
|
|
JEDEC-95 Code |
TO-262AA
|
TO-220AB
|
JESD-30 Code |
R-PSIP-T3
|
R-PSFM-T3
|
JESD-609 Code |
e3
|
e3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
175 °C
|
|
Operating Temperature-Min |
-55 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
IN-LINE
|
FLANGE MOUNT
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
100 W
|
|
Pulsed Drain Current-Max (IDM) |
200 A
|
60 A
|
Reference Standard |
AEC-Q101; IEC-68-1
|
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
Tin (Sn)
|
Matte Tin (Sn)
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Pbfree Code |
|
Yes
|
Moisture Sensitivity Level |
|
1
|
Transistor Application |
|
SWITCHING
|
|
|
|
Compare IPI50N10S3L16AKSA1 with alternatives
Compare SUP50N10-21P-GE3 with alternatives