IPP110N20NA vs IPI110N20N3G feature comparison

IPP110N20NA Infineon Technologies AG

Buy Now Datasheet

IPI110N20N3G Infineon Technologies AG

Buy Now Datasheet
Pbfree Code No Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Part Package Code TO-220AB TO-262AA
Package Description FLANGE MOUNT, R-PSFM-T3 GREEN, PLASTIC, TO-262, 3 PIN
Pin Count 3 3
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 560 mJ 560 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V 200 V
Drain Current-Max (ID) 88 A 88 A
Drain-source On Resistance-Max 0.011 Ω 0.011 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB TO-262AA
JESD-30 Code R-PSFM-T3 R-PSIP-T3
JESD-609 Code e3 e3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 300 W 300 W
Pulsed Drain Current-Max (IDM) 352 A 352 A
Surface Mount NO NO
Terminal Finish Tin (Sn) Tin (Sn)
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 2
Qualification Status Not Qualified

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