IPP60R190C6XKSA1 vs SIHB22N65E-GE3 feature comparison

IPP60R190C6XKSA1 Infineon Technologies AG

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SIHB22N65E-GE3 Vishay Intertechnologies

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Pbfree Code Yes Yes
Rohs Code Yes Yes
Part Life Cycle Code Not Recommended Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG VISHAY INTERTECHNOLOGY INC
Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3 SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon Vishay
Avalanche Energy Rating (Eas) 418 mJ 691 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V 650 V
Drain Current-Max (ID) 20.2 A 22 A
Drain-source On Resistance-Max 0.19 Ω 0.18 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB TO-263AB
JESD-30 Code R-PSFM-T3 R-PSSO-G2
JESD-609 Code e3
Number of Elements 1 1
Number of Terminals 3 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 59 A 56 A
Qualification Status Not Qualified
Surface Mount NO YES
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Factory Lead Time 22 Weeks
Case Connection DRAIN
Feedback Cap-Max (Crss) 4 pF
Operating Temperature-Min -55 °C
Power Dissipation-Max (Abs) 227 W
Turn-off Time-Max (toff) 186 ns
Turn-on Time-Max (ton) 111 ns

Compare IPP60R190C6XKSA1 with alternatives

Compare SIHB22N65E-GE3 with alternatives