IPP80N06S209AKSA1
vs
STI85NF55
feature comparison
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
STMICROELECTRONICS
|
| Package Description |
GREEN, PLASTIC, TO-220, 3 PIN
|
|
| Reach Compliance Code |
unknown
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Avalanche Energy Rating (Eas) |
370 mJ
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE
|
| DS Breakdown Voltage-Min |
55 V
|
|
| Drain Current-Max (ID) |
80 A
|
80 A
|
| Drain-source On Resistance-Max |
0.0091 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-220AB
|
|
| JESD-30 Code |
R-PSFM-T3
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
|
| Operating Mode |
ENHANCEMENT MODE
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
FLANGE MOUNT
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
320 A
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
THROUGH-HOLE
|
|
| Terminal Position |
SINGLE
|
|
| Transistor Element Material |
SILICON
|
|
| Base Number Matches |
1
|
1
|
| Rohs Code |
|
Yes
|
| JESD-609 Code |
|
e3
|
| Operating Temperature-Max |
|
175 °C
|
| Power Dissipation-Max (Abs) |
|
300 W
|
| Terminal Finish |
|
Matte Tin (Sn)
|
|
|
|
Compare IPP80N06S209AKSA1 with alternatives
Compare STI85NF55 with alternatives