IPP80N06S2L-06 vs IPB80N06S2L-06 feature comparison

IPP80N06S2L-06 Rochester Electronics LLC

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IPB80N06S2L-06 Infineon Technologies AG

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Pbfree Code Yes Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC INFINEON TECHNOLOGIES AG
Part Package Code TO-220AB D2PAK
Package Description GREEN, PLASTIC, TO-220, 3 PIN GREEN, PLASTIC, TO-263, 3 PIN
Pin Count 3 4
Reach Compliance Code unknown not_compliant
Additional Feature LOGIC LEVEL COMPATIBLE LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 530 mJ 530 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V 55 V
Drain Current-Max (ID) 80 A 80 A
Drain-source On Resistance-Max 0.0081 Ω 0.0084 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB TO-263AB
JESD-30 Code R-PSFM-T3 R-PSSO-G2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 3 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 245
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 320 A 320 A
Qualification Status COMMERCIAL Not Qualified
Surface Mount NO YES
Terminal Finish MATTE TIN Tin (Sn)
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Element Material SILICON SILICON
Base Number Matches 2 1
ECCN Code EAR99
Samacsys Manufacturer Infineon
Case Connection DRAIN
Operating Temperature-Max 175 °C
Power Dissipation-Max (Abs) 250 W

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