IPW60R165CP vs STI28N60M2 feature comparison

IPW60R165CP Infineon Technologies AG

Buy Now Datasheet

STI28N60M2 STMicroelectronics

Buy Now Datasheet
Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Not Recommended Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG STMICROELECTRONICS
Part Package Code TO-247
Package Description FLANGE MOUNT, R-PSFM-T3 I2PAK-3
Pin Count 3
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon STMicroelectronics
Avalanche Energy Rating (Eas) 522 mJ 350 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V 600 V
Drain Current-Max (ID) 21 A 22 A
Drain-source On Resistance-Max 0.165 Ω 0.15 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3 R-PSIP-T3
JESD-609 Code e3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 192 W 170 W
Pulsed Drain Current-Max (IDM) 61 A 88 A
Qualification Status Not Qualified
Surface Mount NO NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Factory Lead Time 16 Weeks
Date Of Intro 2017-03-16
Case Connection DRAIN
Operating Temperature-Min -55 °C

Compare IPW60R165CP with alternatives

Compare STI28N60M2 with alternatives