IPW65R080CFD vs TK39N60W5 feature comparison

IPW65R080CFD Infineon Technologies AG

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TK39N60W5 Toshiba America Electronic Components

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG TOSHIBA CORP
Part Package Code TO-247
Package Description GREEN, PLASTIC PACKAGE-3 FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon Toshiba
Avalanche Energy Rating (Eas) 1160 mJ 608 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 650 V 600 V
Drain Current-Max (ID) 43.3 A 38.8 A
Drain-source On Resistance-Max 0.08 Ω 0.074 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247 TO-247
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 391 W
Pulsed Drain Current-Max (IDM) 137 A 155 A
Qualification Status Not Qualified
Surface Mount NO NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Factory Lead Time 20 Weeks
Case Connection DRAIN

Compare IPW65R080CFD with alternatives

Compare TK39N60W5 with alternatives