IRF121
vs
IRF123
feature comparison
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
|
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SINGLE
|
SINGLE
|
| DS Breakdown Voltage-Min |
80 V
|
80 V
|
| Drain Current-Max (ID) |
9.2 A
|
8 A
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| Number of Elements |
1
|
1
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
11
|
12
|
|
|
|