IRF130 vs IRF133 feature comparison

IRF130 TT Electronics Power and Hybrid / Semelab Limited

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IRF133 Harris Semiconductor

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Pbfree Code No
Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SEMELAB LTD HARRIS SEMICONDUCTOR
Package Description FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Avalanche Energy Rating (Eas) 75 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 80 V
Drain Current-Max (ID) 45 A 12 A
Drain-source On Resistance-Max 0.21 Ω 0.23 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-3 TO-204AA
JESD-30 Code O-MBFM-P2 O-MBFM-P2
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material METAL METAL
Package Shape ROUND ROUND
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 56 A 48 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Form PIN/PEG PIN/PEG
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 14 2
HTS Code 8541.29.00.95
JESD-609 Code e0
Operating Temperature-Max 175 °C
Power Dissipation Ambient-Max 79 W
Power Dissipation-Max (Abs) 79 W
Terminal Finish TIN LEAD
Turn-off Time-Max (toff) 85 ns
Turn-on Time-Max (ton) 105 ns

Compare IRF130 with alternatives

Compare IRF133 with alternatives