IRF230EDPBF
vs
IRF130SMD05DSG-JQR-B
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
SEMELAB LTD
|
| Package Description |
FLANGE MOUNT, O-MBFM-P2
|
CHIP CARRIER, R-CBCC-N3
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Avalanche Energy Rating (Eas) |
54 mJ
|
|
| Case Connection |
DRAIN
|
ISOLATED
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
200 V
|
100 V
|
| Drain Current-Max (ID) |
9 A
|
11 A
|
| Drain-source On Resistance-Max |
0.49 Ω
|
0.22 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-204AA
|
TO-276AA
|
| JESD-30 Code |
O-MBFM-P2
|
R-CBCC-N3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
METAL
|
CERAMIC, METAL-SEALED COFIRED
|
| Package Shape |
ROUND
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
CHIP CARRIER
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
36 A
|
44 A
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Reference Standard |
CECC
|
|
| Surface Mount |
NO
|
YES
|
| Terminal Form |
PIN/PEG
|
NO LEAD
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Part Package Code |
|
TO-276AA
|
| Pin Count |
|
5
|
| Operating Temperature-Max |
|
150 °C
|
|
|
|
Compare IRF230EDPBF with alternatives
Compare IRF130SMD05DSG-JQR-B with alternatives