IRF232 vs 2N6757R1 feature comparison

IRF232 Rochester Electronics LLC

Buy Now Datasheet

2N6757R1 TT Electronics Power and Hybrid / Semelab Limited

Buy Now Datasheet
Pbfree Code No Yes
Rohs Code No Yes
Part Life Cycle Code Active Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC SEMELAB LTD
Reach Compliance Code unknown compliant
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE
DS Breakdown Voltage-Min 200 V 150 V
Drain Current-Max (ID) 8 A 8 A
Drain-source On Resistance-Max 0.6 Ω 0.6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-204AA TO-204AA
JESD-30 Code O-MBFM-P2 O-MBFM-P2
JESD-609 Code e0 e1
Moisture Sensitivity Level NOT SPECIFIED
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material METAL METAL
Package Shape ROUND ROUND
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 32 A 12 A
Qualification Status COMMERCIAL Not Qualified
Surface Mount NO NO
Terminal Finish TIN LEAD TIN SILVER COPPER
Terminal Form PIN/PEG PIN/PEG
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Part Package Code TO-3
Package Description FLANGE MOUNT, O-MBFM-P2
Pin Count 2
ECCN Code EAR99
Operating Temperature-Max 150 °C

Compare IRF232 with alternatives

Compare 2N6757R1 with alternatives