IRF232 vs JANHCA2N6758 feature comparison

IRF232 Rochester Electronics LLC

Buy Now Datasheet

JANHCA2N6758 Infineon Technologies AG

Buy Now Datasheet
Pbfree Code No
Rohs Code No No
Part Life Cycle Code Active Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC INFINEON TECHNOLOGIES AG
Reach Compliance Code unknown not_compliant
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE
DS Breakdown Voltage-Min 200 V 200 V
Drain Current-Max (ID) 8 A 9 A
Drain-source On Resistance-Max 0.6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-204AA
JESD-30 Code O-MBFM-P2 R-XUUC-N3
JESD-609 Code e0 e0
Moisture Sensitivity Level NOT SPECIFIED
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material METAL UNSPECIFIED
Package Shape ROUND RECTANGULAR
Package Style FLANGE MOUNT UNCASED CHIP
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 32 A 36 A
Qualification Status COMMERCIAL Qualified
Surface Mount NO YES
Terminal Finish TIN LEAD TIN LEAD
Terminal Form PIN/PEG NO LEAD
Terminal Position BOTTOM UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Package Description DIE-3
ECCN Code EAR99
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 75 W
Reference Standard MIL-19500/542G

Compare IRF232 with alternatives

Compare JANHCA2N6758 with alternatives