IRF242 vs IRF244 feature comparison

IRF242 FCI Semiconductor

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IRF244 Intersil Corporation

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Rohs Code No No
Part Life Cycle Code Contact Manufacturer Obsolete
Ihs Manufacturer FIRST COMPONENTS INTERNATIONAL INTERSIL CORP
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID) 16 A 14 A
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e0 e0
Number of Elements 1 1
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 125 W 125 W
Surface Mount NO NO
Terminal Finish Tin/Lead (Sn/Pb) TIN LEAD
Base Number Matches 11 7
Avalanche Energy Rating (Eas) 550 mJ
Case Connection DRAIN
DS Breakdown Voltage-Min 250 V
Drain-source On Resistance-Max 0.28 Ω
JEDEC-95 Code TO-204AA
JESD-30 Code O-MBFM-P2
Number of Terminals 2
Package Body Material METAL
Package Shape ROUND
Package Style FLANGE MOUNT
Pulsed Drain Current-Max (IDM) 56 A
Qualification Status Not Qualified
Terminal Form PIN/PEG
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON

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