IRF351
vs
JANHCA2N6768
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Transferred
|
Active
|
| Ihs Manufacturer |
INTERNATIONAL RECTIFIER CORP
|
INFINEON TECHNOLOGIES AG
|
| Reach Compliance Code |
compliant
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SINGLE
|
SINGLE
|
| DS Breakdown Voltage-Min |
350 V
|
400 V
|
| Drain Current-Max (ID) |
15 A
|
14 A
|
| Drain-source On Resistance-Max |
0.3 Ω
|
0.3 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-204AA
|
|
| JESD-30 Code |
O-MBFM-P2
|
S-XUUC-N3
|
| JESD-609 Code |
e0
|
e0
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
METAL
|
UNSPECIFIED
|
| Package Shape |
ROUND
|
SQUARE
|
| Package Style |
FLANGE MOUNT
|
UNCASED CHIP
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
150 W
|
150 W
|
| Pulsed Drain Current-Max (IDM) |
60 A
|
56 A
|
| Qualification Status |
Not Qualified
|
Qualified
|
| Surface Mount |
NO
|
YES
|
| Terminal Finish |
TIN LEAD
|
TIN LEAD
|
| Terminal Form |
PIN/PEG
|
NO LEAD
|
| Terminal Position |
BOTTOM
|
UPPER
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
10
|
1
|
| Package Description |
|
DIE-3
|
| Avalanche Energy Rating (Eas) |
|
700 mJ
|
| Reference Standard |
|
MIL-19500/543G
|
| Transistor Application |
|
SWITCHING
|
|
|
|
Compare IRF351 with alternatives
Compare JANHCA2N6768 with alternatives