IRF351
vs
2N6768R1
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
SAMSUNG SEMICONDUCTOR INC
|
TT ELECTRONICS PLC
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SINGLE
|
SINGLE
|
| Drain Current-Max (ID) |
15 A
|
14 A
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-609 Code |
e0
|
e1
|
| Number of Elements |
1
|
1
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
150 W
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
TIN SILVER COPPER
|
| Base Number Matches |
18
|
2
|
| Package Description |
|
FLANGE MOUNT, O-MBFM-P2
|
| Additional Feature |
|
AVALANCHE RATED
|
| Avalanche Energy Rating (Eas) |
|
11.3 mJ
|
| Case Connection |
|
DRAIN
|
| DS Breakdown Voltage-Min |
|
400 V
|
| Drain-source On Resistance-Max |
|
0.4 Ω
|
| JEDEC-95 Code |
|
TO-204AA
|
| JESD-30 Code |
|
O-MBFM-P2
|
| Number of Terminals |
|
2
|
| Package Body Material |
|
METAL
|
| Package Shape |
|
ROUND
|
| Package Style |
|
FLANGE MOUNT
|
| Pulsed Drain Current-Max (IDM) |
|
56 A
|
| Qualification Status |
|
Not Qualified
|
| Terminal Form |
|
PIN/PEG
|
| Terminal Position |
|
BOTTOM
|
| Transistor Element Material |
|
SILICON
|
|
|
|
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