IRF4905SPBF vs IRF4905STRRPBF feature comparison

IRF4905SPBF Infineon Technologies AG

Buy Now Datasheet

IRF4905STRRPBF Infineon Technologies AG

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon Infineon
Additional Feature HIGH RELIABILITY, AVALANCHE RATED HIGH RELIABILITY, AVALANCHE RATED
Avalanche Energy Rating (Eas) 140 mJ 140 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V 55 V
Drain Current-Max (ID) 42 A 42 A
Drain-source On Resistance-Max 0.02 Ω 0.02 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252 TO-263AB
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity/Channel Type P-CHANNEL P-CHANNEL
Power Dissipation-Max (Abs) 170 W 170 W
Pulsed Drain Current-Max (IDM) 280 A 280 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Package Description SMALL OUTLINE, R-PSSO-G2
Factory Lead Time 52 Weeks
Date Of Intro 1996-07-26

Compare IRF4905SPBF with alternatives

Compare IRF4905STRRPBF with alternatives