IRF512-006 vs SUP90N08-4M8P-E3 feature comparison

IRF512-006 Infineon Technologies AG

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SUP90N08-4M8P-E3 Vishay Siliconix

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Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG VISHAY SILICONIX
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Case Connection DRAIN
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 75 V
Drain Current-Max (ID) 4.9 A 90 A
Drain-source On Resistance-Max 0.74 Ω 0.0085 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e3 e3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 18 A 240 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish MATTE TIN OVER NICKEL MATTE TIN OVER NICKEL
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Element Material SILICON SILICON
Base Number Matches 2 1
Pbfree Code Yes
Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 245 mJ
JEDEC-95 Code TO-220AB
Moisture Sensitivity Level 1
Operating Temperature-Max 175 °C
Power Dissipation-Max (Abs) 300 W

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