IRF540 vs IRF543 feature comparison

IRF540 Samsung Semiconductor

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IRF543 Harris Semiconductor

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Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC HARRIS SEMICONDUCTOR
Part Package Code SFM
Package Description TO-220, 3 PIN
Pin Count 3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95 8541.29.00.95
Avalanche Energy Rating (Eas) 230 mJ 230 mJ
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 80 V
Drain Current-Max (ID) 28 A 25 A
Drain-source On Resistance-Max 0.077 Ω 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB TO-220AB
JESD-30 Code R-PSFM-T3 R-PSFM-T3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 125 W 150 W
Power Dissipation-Max (Abs) 150 W 150 W
Pulsed Drain Current-Max (IDM) 110 A 100 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 135 ns 135 ns
Turn-on Time-Max (ton) 133 ns 133 ns
Base Number Matches 2 2
Rohs Code No
Case Connection DRAIN
JESD-609 Code e0
Terminal Finish TIN LEAD

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