IRF540
vs
IRF543
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
HARRIS SEMICONDUCTOR
Part Package Code
SFM
Package Description
TO-220, 3 PIN
Pin Count
3
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.95
8541.29.00.95
Avalanche Energy Rating (Eas)
230 mJ
230 mJ
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
80 V
Drain Current-Max (ID)
28 A
25 A
Drain-source On Resistance-Max
0.077 Ω
0.1 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
TO-220AB
JESD-30 Code
R-PSFM-T3
R-PSFM-T3
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
175 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation Ambient-Max
125 W
150 W
Power Dissipation-Max (Abs)
150 W
150 W
Pulsed Drain Current-Max (IDM)
110 A
100 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Turn-off Time-Max (toff)
135 ns
135 ns
Turn-on Time-Max (ton)
133 ns
133 ns
Base Number Matches
2
2
Rohs Code
No
Case Connection
DRAIN
JESD-609 Code
e0
Terminal Finish
TIN LEAD
Compare IRF540 with alternatives
Compare IRF543 with alternatives