IRF540NSTRLHR
vs
2SK3647-01
feature comparison
Pbfree Code |
No
|
|
Rohs Code |
No
|
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
INTERNATIONAL RECTIFIER CORP
|
FUJI ELECTRIC CO LTD
|
Part Package Code |
D2PAK
|
|
Package Description |
SMALL OUTLINE, R-PSSO-G2
|
CHIP CARRIER, S-XBCC-N4
|
Pin Count |
3
|
4
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
|
|
Avalanche Energy Rating (Eas) |
185 mJ
|
278 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
100 V
|
100 V
|
Drain Current-Max (ID) |
33 A
|
30 A
|
Drain-source On Resistance-Max |
0.044 Ω
|
0.044 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PSSO-G2
|
S-XBCC-N4
|
JESD-609 Code |
e0
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
4
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
PLASTIC/EPOXY
|
UNSPECIFIED
|
Package Shape |
RECTANGULAR
|
SQUARE
|
Package Style |
SMALL OUTLINE
|
CHIP CARRIER
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
110 A
|
120 A
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
TIN LEAD
|
|
Terminal Form |
GULL WING
|
NO LEAD
|
Terminal Position |
SINGLE
|
BOTTOM
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Qualification Status |
|
Not Qualified
|
|
|
|
Compare IRF540NSTRLHR with alternatives
Compare 2SK3647-01 with alternatives