IRF540NSTRLPBF
vs
IRF3710PBF
feature comparison
All Stats
Differences Only
Rohs Code
Yes
Yes
Part Life Cycle Code
Active
Active
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
INFINEON TECHNOLOGIES AG
Package Description
SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code
not_compliant
compliant
ECCN Code
EAR99
EAR99
Factory Lead Time
16 Weeks, 3 Days
16 Weeks, 3 Days
Samacsys Manufacturer
Infineon
Infineon
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas)
185 mJ
280 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
100 V
Drain Current-Max (ID)
33 A
57 A
Drain-source On Resistance-Max
0.044 Ω
0.023 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263
TO-220AB
JESD-30 Code
R-PSSO-G2
R-PSFM-T3
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
2
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
175 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
FLANGE MOUNT
Peak Reflow Temperature (Cel)
260
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
130 W
200 W
Pulsed Drain Current-Max (IDM)
110 A
180 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
NO
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form
GULL WING
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
NOT SPECIFIED
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
2
Operating Temperature-Min
-55 °C
Compare IRF540NSTRLPBF with alternatives
Compare IRF3710PBF with alternatives