IRF542 vs NTB52N10G feature comparison

IRF542 Harris Semiconductor

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NTB52N10G Rochester Electronics LLC

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Rohs Code No Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer HARRIS SEMICONDUCTOR ROCHESTER ELECTRONICS LLC
Reach Compliance Code unknown unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 230 mJ 800 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 100 V
Drain Current-Max (ID) 25 A 52 A
Drain-source On Resistance-Max 0.1 Ω 0.03 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3 R-PSSO-G2
JESD-609 Code e0 e3
Number of Elements 1 1
Number of Terminals 3 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 150 W
Power Dissipation-Max (Abs) 150 W
Pulsed Drain Current-Max (IDM) 100 A 156 A
Qualification Status Not Qualified COMMERCIAL
Surface Mount NO YES
Terminal Finish TIN LEAD MATTE TIN
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 135 ns
Turn-on Time-Max (ton) 133 ns
Base Number Matches 2 1
Pbfree Code No
Package Description LEAD FREE, CASE 418B-04, D2PAK-3
Pin Count 3
Manufacturer Package Code CASE 418B-04
Moisture Sensitivity Level NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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