IRF542
vs
NTB52N10T4G
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
|
| Ihs Manufacturer |
HARRIS SEMICONDUCTOR
|
|
| Reach Compliance Code |
unknown
|
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.29.00.95
|
|
| Avalanche Energy Rating (Eas) |
230 mJ
|
|
| Case Connection |
DRAIN
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
|
| DS Breakdown Voltage-Min |
100 V
|
|
| Drain Current-Max (ID) |
25 A
|
|
| Drain-source On Resistance-Max |
0.1 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
|
| JEDEC-95 Code |
TO-220AB
|
|
| JESD-30 Code |
R-PSFM-T3
|
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
1
|
|
| Number of Terminals |
3
|
|
| Operating Mode |
ENHANCEMENT MODE
|
|
| Operating Temperature-Max |
175 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
FLANGE MOUNT
|
|
| Polarity/Channel Type |
N-CHANNEL
|
|
| Power Dissipation Ambient-Max |
150 W
|
|
| Power Dissipation-Max (Abs) |
150 W
|
|
| Pulsed Drain Current-Max (IDM) |
100 A
|
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
NO
|
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
THROUGH-HOLE
|
|
| Terminal Position |
SINGLE
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
|
| Turn-off Time-Max (toff) |
135 ns
|
|
| Turn-on Time-Max (ton) |
133 ns
|
|
| Base Number Matches |
2
|
|
|
|
|
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