IRF630NS
vs
SIHF630STRL-GE3
feature comparison
| Part Life Cycle Code |
Contact Manufacturer
|
Active
|
| Ihs Manufacturer |
TRANSYS ELECTRONICS LTD
|
VISHAY SILICONIX
|
| Package Description |
SMALL OUTLINE, R-PSSO-G2
|
,
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Case Connection |
DRAIN
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE
|
| DS Breakdown Voltage-Min |
200 V
|
|
| Drain Current-Max (ID) |
9.3 A
|
9 A
|
| Drain-source On Resistance-Max |
0.3 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PSSO-G2
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
|
| Operating Mode |
ENHANCEMENT MODE
|
|
| Operating Temperature-Max |
175 °C
|
150 °C
|
| Operating Temperature-Min |
-55 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
37 A
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
|
| Terminal Position |
SINGLE
|
|
| Transistor Element Material |
SILICON
|
|
| Base Number Matches |
4
|
1
|
| Samacsys Manufacturer |
|
Vishay
|
| Power Dissipation-Max (Abs) |
|
74 W
|
|
|
|
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