IRF630SPBF
vs
IRF630S
feature comparison
| Pbfree Code |
Yes
|
|
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Transferred
|
Active
|
| Ihs Manufacturer |
INTERNATIONAL RECTIFIER CORP
|
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
|
| Package Description |
SMALL OUTLINE, R-PSSO-G2
|
|
| Pin Count |
3
|
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
AVALANCHE RATED
|
|
| Avalanche Energy Rating (Eas) |
250 mJ
|
|
| Case Connection |
DRAIN
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE
|
| DS Breakdown Voltage-Min |
200 V
|
200 V
|
| Drain Current-Max (ID) |
9 A
|
9 A
|
| Drain-source On Resistance-Max |
0.4 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PSSO-G2
|
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
74 W
|
|
| Pulsed Drain Current-Max (IDM) |
36 A
|
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
YES
|
|
| Terminal Finish |
Matte Tin (Sn) - with Nickel (Ni) barrier
|
|
| Terminal Form |
GULL WING
|
|
| Terminal Position |
SINGLE
|
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
3
|
7
|
|
|
|
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