IRF631 vs IRF631-009 feature comparison

IRF631 Samsung Semiconductor

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IRF631-009 International Rectifier

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC INTERNATIONAL RECTIFIER CORP
Part Package Code SFM
Package Description TO-220, 3 PIN FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 170 mJ
Configuration SINGLE SINGLE
DS Breakdown Voltage-Min 150 V 150 V
Drain Current-Max (ID) 9 A 9 A
Drain-source On Resistance-Max 0.4 Ω 0.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3 R-PSFM-T3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 75 W
Power Dissipation-Max (Abs) 75 W
Pulsed Drain Current-Max (IDM) 36 A 36 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 90 ns
Turn-on Time-Max (ton) 80 ns
Base Number Matches 1 2
Pbfree Code No
Rohs Code No
Case Connection DRAIN
JESD-609 Code e0
Terminal Finish TIN LEAD

Compare IRF631 with alternatives

Compare IRF631-009 with alternatives