IRF640NSPBF vs IRF641 feature comparison

IRF640NSPBF International Rectifier

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IRF641 Samsung Semiconductor

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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP SAMSUNG SEMICONDUCTOR INC
Part Package Code D2PAK SFM
Package Description LEAD FREE, PLASTIC, D2PAK-2/3 TO-220, 3 PIN
Pin Count 3 3
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95 8541.29.00.95
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 247 mJ 580 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE
DS Breakdown Voltage-Min 200 V 150 V
Drain Current-Max (ID) 18 A 18 A
Drain-source On Resistance-Max 0.15 Ω 0.18 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB TO-220AB
JESD-30 Code R-PSSO-G2 R-PSFM-T3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 150 W 125 W
Pulsed Drain Current-Max (IDM) 72 A 72 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Power Dissipation Ambient-Max 125 W
Turn-off Time-Max (toff) 140 ns
Turn-on Time-Max (ton) 90 ns

Compare IRF640NSPBF with alternatives

Compare IRF641 with alternatives