IRF640NSTRLPBF vs SIHF640S-GE3 feature comparison

IRF640NSTRLPBF Infineon Technologies AG

Buy Now Datasheet

SIHF640S-GE3 Vishay Intertechnologies

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG VISHAY INTERTECHNOLOGY INC
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
Factory Lead Time 16 Weeks, 3 Days 13 Weeks
Samacsys Manufacturer Infineon Vishay
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE AVALANCHE RATED
Avalanche Energy Rating (Eas) 247 mJ 580 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V 200 V
Drain Current-Max (ID) 18 A 18 A
Drain-source On Resistance-Max 0.15 Ω 0.18 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB TO-263AB
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 150 W 130 W
Pulsed Drain Current-Max (IDM) 72 A 72 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30 40
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Package Description HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3

Compare IRF640NSTRLPBF with alternatives

Compare SIHF640S-GE3 with alternatives