IRF640STRLPBF vs STB18N20 feature comparison

IRF640STRLPBF Vishay Intertechnologies

Buy Now Datasheet

STB18N20 STMicroelectronics

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC STMICROELECTRONICS
Package Description LEAD FREE, PLASTIC, D2PAK-3 D2PAK-2
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer Vishay
Additional Feature AVALANCHE RATED AVALANCHE RATED
Avalanche Energy Rating (Eas) 580 mJ 50 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V 200 V
Drain Current-Max (ID) 18 A 18 A
Drain-source On Resistance-Max 0.18 Ω 0.18 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 130 W 125 W
Pulsed Drain Current-Max (IDM) 72 A 72 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Matte Tin (Sn) - annealed MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 3
Part Package Code D2PAK
Pin Count 3
HTS Code 8541.29.00.95
Feedback Cap-Max (Crss) 70 pF
JEDEC-95 Code TO-263AB
Power Dissipation Ambient-Max 125 W
Turn-on Time-Max (ton) 135 ns

Compare IRF640STRLPBF with alternatives

Compare STB18N20 with alternatives