IRF641
vs
BUK456-200A
feature comparison
Rohs Code |
No
|
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
HARRIS SEMICONDUCTOR
|
NXP SEMICONDUCTORS
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.29.00.95
|
8541.29.00.95
|
Avalanche Energy Rating (Eas) |
580 mJ
|
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
150 V
|
200 V
|
Drain Current-Max (ID) |
18 A
|
19 A
|
Drain-source On Resistance-Max |
0.18 Ω
|
0.16 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-220AB
|
TO-220AB
|
JESD-30 Code |
R-PSFM-T3
|
R-PSFM-T3
|
JESD-609 Code |
e0
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
175 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation Ambient-Max |
125 W
|
150 W
|
Power Dissipation-Max (Abs) |
125 W
|
|
Pulsed Drain Current-Max (IDM) |
72 A
|
76 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
TIN LEAD
|
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Turn-off Time-Max (toff) |
122 ns
|
255 ns
|
Turn-on Time-Max (ton) |
98 ns
|
90 ns
|
Base Number Matches |
2
|
3
|
Part Package Code |
|
TO-220AB
|
Package Description |
|
PLASTIC, TO-220AB, 3 PIN
|
Pin Count |
|
3
|
Feedback Cap-Max (Crss) |
|
100 pF
|
|
|
|
Compare IRF641 with alternatives
Compare BUK456-200A with alternatives