IRF641
vs
BUZ30A
feature comparison
Pbfree Code |
No
|
|
Rohs Code |
No
|
No
|
Part Life Cycle Code |
Active
|
Transferred
|
Ihs Manufacturer |
ROCHESTER ELECTRONICS LLC
|
SIEMENS A G
|
Reach Compliance Code |
unknown
|
unknown
|
Avalanche Energy Rating (Eas) |
580 mJ
|
450 mJ
|
Case Connection |
DRAIN
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE
|
DS Breakdown Voltage-Min |
150 V
|
200 V
|
Drain Current-Max (ID) |
18 A
|
21 A
|
Drain-source On Resistance-Max |
0.18 Ω
|
0.13 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-220AB
|
TO-220AB
|
JESD-30 Code |
R-PSFM-T3
|
R-PSFM-T3
|
JESD-609 Code |
e0
|
e0
|
Moisture Sensitivity Level |
NOT SPECIFIED
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
72 A
|
84 A
|
Qualification Status |
COMMERCIAL
|
Not Qualified
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
TIN LEAD
|
Tin/Lead (Sn/Pb)
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
4
|
Part Package Code |
|
SFM
|
Package Description |
|
TO-220, 3 PIN
|
Pin Count |
|
3
|
ECCN Code |
|
EAR99
|
HTS Code |
|
8541.29.00.95
|
Feedback Cap-Max (Crss) |
|
200 pF
|
Operating Temperature-Max |
|
150 °C
|
Power Dissipation Ambient-Max |
|
125 W
|
Power Dissipation-Max (Abs) |
|
125 W
|
Turn-off Time-Max (toff) |
|
440 ns
|
Turn-on Time-Max (ton) |
|
155 ns
|
|
|
|
Compare IRF641 with alternatives
Compare BUZ30A with alternatives