IRF6619TR1PBF vs IRF6619PBF feature comparison

IRF6619TR1PBF International Rectifier

Buy Now Datasheet

IRF6619PBF Infineon Technologies AG

Buy Now Datasheet
Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP INFINEON TECHNOLOGIES AG
Package Description ROHS COMPLIANT, ISOMETRIC-3 CHIP CARRIER, R-XBCC-N3
Pin Count 3
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Avalanche Energy Rating (Eas) 240 mJ 240 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V 20 V
Drain Current-Max (ID) 30 A 30 A
Drain-source On Resistance-Max 0.0022 Ω 0.0022 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XBCC-N3 R-XBCC-N3
JESD-609 Code e4
Moisture Sensitivity Level 3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material UNSPECIFIED UNSPECIFIED
Package Shape RECTANGULAR RECTANGULAR
Package Style CHIP CARRIER CHIP CARRIER
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 89 W
Pulsed Drain Current-Max (IDM) 240 A 240 A
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Finish SILVER NICKEL
Terminal Form NO LEAD NO LEAD
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1

Compare IRF6619TR1PBF with alternatives

Compare IRF6619PBF with alternatives