IRF6641TRPBF
vs
EPC2019
feature comparison
Pbfree Code |
Yes
|
|
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Transferred
|
Contact Manufacturer
|
Ihs Manufacturer |
INTERNATIONAL RECTIFIER CORP
|
EFFICIENT POWER CONVERSION CORP
|
Package Description |
HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3
|
UNCASED CHIP, R-XXUC-X7
|
Pin Count |
3
|
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Avalanche Energy Rating (Eas) |
46 mJ
|
|
Case Connection |
DRAIN
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
200 V
|
200 V
|
Drain Current-Max (ID) |
4.6 A
|
8.5 A
|
Drain-source On Resistance-Max |
0.0599 Ω
|
0.05 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-XBCC-N3
|
R-XXUC-X7
|
JESD-609 Code |
e1
|
|
Moisture Sensitivity Level |
1
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
7
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
|
Package Body Material |
UNSPECIFIED
|
UNSPECIFIED
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
CHIP CARRIER
|
UNCASED CHIP
|
Peak Reflow Temperature (Cel) |
260
|
NOT SPECIFIED
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
89 W
|
|
Pulsed Drain Current-Max (IDM) |
37 A
|
42 A
|
Qualification Status |
Not Qualified
|
|
Surface Mount |
YES
|
|
Terminal Finish |
TIN SILVER COPPER
|
|
Terminal Form |
NO LEAD
|
UNSPECIFIED
|
Terminal Position |
BOTTOM
|
UNSPECIFIED
|
Time@Peak Reflow Temperature-Max (s) |
30
|
NOT SPECIFIED
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
GALLIUM NITRIDE
|
Base Number Matches |
1
|
1
|
Samacsys Manufacturer |
|
Efficient Power Conversion
|
Additional Feature |
|
ULTRA LOW RESISTANCE
|
|
|
|
Compare IRF6641TRPBF with alternatives
Compare EPC2019 with alternatives