IRF6668TR1
vs
IRF6668
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
INTERNATIONAL RECTIFIER CORP
|
INTERNATIONAL RECTIFIER CORP
|
| Package Description |
ISOMETRIC-3
|
CHIP CARRIER, R-XBCC-N3
|
| Pin Count |
3
|
3
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Avalanche Energy Rating (Eas) |
24 mJ
|
24 mJ
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
80 V
|
80 V
|
| Drain Current-Max (ID) |
55 A
|
55 A
|
| Drain-source On Resistance-Max |
0.015 Ω
|
0.015 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-XBCC-N3
|
R-XBCC-N3
|
| JESD-609 Code |
e0
|
e0
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
UNSPECIFIED
|
UNSPECIFIED
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
CHIP CARRIER
|
CHIP CARRIER
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
89 W
|
89 W
|
| Pulsed Drain Current-Max (IDM) |
170 A
|
170 A
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
TIN LEAD
|
TIN LEAD
|
| Terminal Form |
NO LEAD
|
NO LEAD
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
2
|
5
|
| Moisture Sensitivity Level |
|
1
|
| Operating Temperature-Min |
|
-40 °C
|
|
|
|
Compare IRF6668TR1 with alternatives
Compare IRF6668 with alternatives