IRF7201 vs IRF7201PBF feature comparison

IRF7201 Infineon Technologies AG

Buy Now Datasheet

IRF7201PBF Infineon Technologies AG

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon Infineon
Additional Feature ULTRA LOW RESISTANCE HIGH RELIABILITY
Avalanche Energy Rating (Eas) 70 mJ 70 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 30 V
Drain Current-Max (ID) 7.3 A 7.3 A
Drain-source On Resistance-Max 0.03 Ω 0.03 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA MS-012AA
JESD-30 Code R-PDSO-G8 R-PDSO-G8
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 8 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 58 A 58 A
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 2
JESD-609 Code e3
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Power Dissipation-Max (Abs) 2.5 W
Qualification Status Not Qualified
Terminal Finish Matte Tin (Sn)

Compare IRF7201 with alternatives

Compare IRF7201PBF with alternatives