IRF7201PBF vs AP2302GN-HF feature comparison

IRF7201PBF Infineon Technologies AG

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AP2302GN-HF Advanced Power Electronics Corp

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Contact Manufacturer
Ihs Manufacturer INFINEON TECHNOLOGIES AG ADVANCED POWER ELECTRONICS CORP
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon
Additional Feature HIGH RELIABILITY
Avalanche Energy Rating (Eas) 70 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 20 V
Drain Current-Max (ID) 7.3 A 3.2 A
Drain-source On Resistance-Max 0.03 Ω 0.085 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8 R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 8 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 2.5 W
Pulsed Drain Current-Max (IDM) 58 A 10 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Package Description SMALL OUTLINE, R-PDSO-G3
Pin Count 3

Compare IRF7201PBF with alternatives

Compare AP2302GN-HF with alternatives