IRF7303TRPBF vs IRF7306PBF feature comparison

IRF7303TRPBF Infineon Technologies AG

Buy Now Datasheet

IRF7306PBF Infineon Technologies AG

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Factory Lead Time 10 Weeks, 3 Days
Samacsys Manufacturer Infineon Infineon
Additional Feature ULTRA LOW RESISTANCE LOGIC LEVEL COMPATIBLE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 30 V
Drain Current-Max (ID) 4.9 A 3.6 A
Drain-source On Resistance-Max 0.05 Ω 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA MS-012AA
JESD-30 Code R-PDSO-G8 R-PDSO-G8
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 2 2
Number of Terminals 8 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type N-CHANNEL P-CHANNEL
Pulsed Drain Current-Max (IDM) 20 A 14 A
Surface Mount YES YES
Terminal Finish Matte Tin (Sn) MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Power Dissipation-Max (Abs) 1.4 W
Qualification Status Not Qualified

Compare IRF7303TRPBF with alternatives

Compare IRF7306PBF with alternatives