IRF7313PBF-1
vs
NTMD6N03R2G
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
ROCHESTER ELECTRONICS LLC
|
| Package Description |
,
|
LEAD FREE, CASE 751-07, SOIC-8
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
|
| DS Breakdown Voltage-Min |
30 V
|
30 V
|
| Drain Current-Max (ID) |
6.5 A
|
6 A
|
| Drain-source On Resistance-Max |
0.029 Ω
|
0.032 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
MS-012AA
|
|
| Moisture Sensitivity Level |
1
|
NOT SPECIFIED
|
| Number of Elements |
2
|
2
|
| Operating Temperature-Max |
150 °C
|
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
260
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
2 W
|
|
| Surface Mount |
YES
|
YES
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
40
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
2
|
2
|
| Pbfree Code |
|
No
|
| Part Package Code |
|
SOT
|
| Pin Count |
|
8
|
| Manufacturer Package Code |
|
CASE 751-07
|
| Avalanche Energy Rating (Eas) |
|
325 mJ
|
| Configuration |
|
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
| JESD-30 Code |
|
R-PDSO-G8
|
| JESD-609 Code |
|
e3
|
| Number of Terminals |
|
8
|
| Operating Mode |
|
ENHANCEMENT MODE
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
SMALL OUTLINE
|
| Pulsed Drain Current-Max (IDM) |
|
30 A
|
| Qualification Status |
|
COMMERCIAL
|
| Terminal Finish |
|
MATTE TIN
|
| Terminal Form |
|
GULL WING
|
| Terminal Position |
|
DUAL
|
| Transistor Application |
|
SWITCHING
|
|
|
|
Compare IRF7313PBF-1 with alternatives
Compare NTMD6N03R2G with alternatives