IRF7319TRPBF vs IRF7319TR feature comparison

IRF7319TRPBF Infineon Technologies AG

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IRF7319TR Infineon Technologies AG

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Rohs Code Yes No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Package Description SOP-8
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Factory Lead Time 17 Weeks, 5 Days
Samacsys Manufacturer Infineon Infineon
Additional Feature AVALANCHE RATED, ULTRA-LOW RESISTANCE AVALANCHE RATED
Avalanche Energy Rating (Eas) 82 mJ 82 mJ
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 30 V
Drain-source On Resistance-Max 0.029 Ω 0.029 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA MS-012AA
JESD-30 Code R-PDSO-G8 R-PDSO-G8
Moisture Sensitivity Level 1 2
Number of Elements 2 2
Number of Terminals 8 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL AND P-CHANNEL N-CHANNEL AND P-CHANNEL
Pulsed Drain Current-Max (IDM) 30 A 30 A
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 2
Drain Current-Max (ID) 6.5 A
JESD-609 Code e3
Qualification Status Not Qualified
Terminal Finish MATTE TIN

Compare IRF7319TRPBF with alternatives

Compare IRF7319TR with alternatives