IRF7389TRPBF vs IRF7319TRPBF feature comparison

IRF7389TRPBF International Rectifier

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IRF7319TRPBF International Rectifier

Buy Now Datasheet
Pbfree Code Yes Yes
Rohs Code Yes Yes
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP INTERNATIONAL RECTIFIER CORP
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Additional Feature HIGH RELIABILITY, AVALANCHE RATED AVALANCHE RATED
Avalanche Energy Rating (Eas) 82 mJ 82 mJ
Configuration COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 30 V
Drain Current-Max (ID) 7.3 A 6.5 A
Drain-source On Resistance-Max 0.029 Ω 0.029 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA MS-012AA
JESD-30 Code R-PDSO-G8 R-PDSO-G8
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 2 2
Number of Terminals 8 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type N-CHANNEL AND P-CHANNEL N-CHANNEL AND P-CHANNEL
Power Dissipation-Max (Abs) 2.5 W 2 W
Pulsed Drain Current-Max (IDM) 30 A 30 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 2
HTS Code 8541.29.00.95
Power Dissipation Ambient-Max 2 W

Compare IRF7389TRPBF with alternatives

Compare IRF7319TRPBF with alternatives