IRF7424TRPBF vs IRF7424 feature comparison

IRF7424TRPBF Infineon Technologies AG

Buy Now Datasheet

IRF7424 Infineon Technologies AG

Buy Now Datasheet
Rohs Code Yes No
Part Life Cycle Code Active Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Factory Lead Time 17 Weeks
Samacsys Manufacturer Infineon Infineon
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 30 V
Drain Current-Max (ID) 11 A 11 A
Drain-source On Resistance-Max 0.0135 Ω 0.0135 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA MS-012AA
JESD-609 Code e3 e0
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Operating Temperature-Max 150 °C 150 °C
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity/Channel Type P-CHANNEL P-CHANNEL
Power Dissipation-Max (Abs) 2.5 W
Surface Mount YES YES
Terminal Finish Matte Tin (Sn) Tin/Lead (Sn/Pb)
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Transistor Element Material SILICON SILICON
Base Number Matches 2 6
Package Description SO-8
JESD-30 Code R-PDSO-G8
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Pulsed Drain Current-Max (IDM) 47 A
Qualification Status Not Qualified
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING

Compare IRF7424TRPBF with alternatives

Compare IRF7424 with alternatives