IRF7501PBF vs IRF7501TRPBF feature comparison

IRF7501PBF Infineon Technologies AG

Buy Now Datasheet

IRF7501TRPBF Infineon Technologies AG

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon Infineon
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Peak Reflow Temperature (Cel) 260 260
Pulsed Drain Current-Max (IDM) 19 A 19 A
Qualification Status Not Qualified
Terminal Finish MATTE TIN Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s) 30 30
Base Number Matches 1 1
Package Description SMALL OUTLINE, S-PDSO-G8
Factory Lead Time 11 Weeks, 1 Day
Additional Feature ULTRA LOW RESISTANCE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 2.4 A
Drain-source On Resistance-Max 0.135 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PDSO-G8
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Compare IRF7501PBF with alternatives

Compare IRF7501TRPBF with alternatives