IRF7530
vs
IRF7530
feature comparison
Rohs Code |
No
|
No
|
Part Life Cycle Code |
Not Recommended
|
Transferred
|
Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
INTERNATIONAL RECTIFIER CORP
|
Package Description |
MICRO-8
|
SMALL OUTLINE, S-PDSO-G8
|
Reach Compliance Code |
not_compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Samacsys Manufacturer |
Infineon
|
|
Additional Feature |
HIGH RELIABILITY
|
HIGH RELIABILITY
|
Avalanche Energy Rating (Eas) |
33 mJ
|
33 mJ
|
Configuration |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
20 V
|
20 V
|
Drain Current-Max (ID) |
5.4 A
|
5.4 A
|
Drain-source On Resistance-Max |
0.03 Ω
|
0.03 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
S-PDSO-G8
|
S-PDSO-G8
|
JESD-609 Code |
e0
|
e0
|
Moisture Sensitivity Level |
1
|
2
|
Number of Elements |
2
|
2
|
Number of Terminals |
8
|
8
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
SQUARE
|
SQUARE
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
40 A
|
40 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
Tin/Lead (Sn/Pb)
|
TIN LEAD
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
DUAL
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
5
|
4
|
Pin Count |
|
8
|
Power Dissipation-Max (Abs) |
|
1.3 W
|
|
|
|
Compare IRF7530 with alternatives
Compare IRF7530 with alternatives