IRF7832TR
vs
NTMFS4935NT3G
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
End Of Life
|
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
ONSEMI
|
| Package Description |
SOP-8
|
|
| Reach Compliance Code |
unknown
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Samacsys Manufacturer |
Infineon
|
onsemi
|
| Avalanche Energy Rating (Eas) |
260 mJ
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
|
| DS Breakdown Voltage-Min |
30 V
|
|
| Drain Current-Max (ID) |
20 A
|
|
| Drain-source On Resistance-Max |
0.004 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
|
| JEDEC-95 Code |
MS-012AA
|
|
| JESD-30 Code |
R-PDSO-G8
|
|
| JESD-609 Code |
e3
|
e3
|
| Moisture Sensitivity Level |
2
|
1
|
| Number of Elements |
1
|
|
| Number of Terminals |
8
|
|
| Operating Mode |
ENHANCEMENT MODE
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Polarity/Channel Type |
N-CHANNEL
|
|
| Pulsed Drain Current-Max (IDM) |
160 A
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
|
| Terminal Finish |
MATTE TIN
|
Matte Tin (Sn) - annealed
|
| Terminal Form |
GULL WING
|
|
| Terminal Position |
DUAL
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
|
| Base Number Matches |
3
|
1
|
| Pbfree Code |
|
Yes
|
| Part Package Code |
|
DFN5 5X6, 1.27P (SO 8FL)
|
| Pin Count |
|
5
|
| Manufacturer Package Code |
|
488AA
|
| Factory Lead Time |
|
4 Weeks
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
Compare IRF7832TR with alternatives
Compare NTMFS4935NT3G with alternatives