IRF820 vs MTP3N50 feature comparison

IRF820 Thomson Consumer Electronics

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MTP3N50 Motorola Mobility LLC

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer THOMSON CONSUMER ELECTRONICS MOTOROLA INC
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID) 2.5 A 3 A
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e0 e0
Number of Elements 1 1
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 50 W 75 W
Surface Mount NO NO
Terminal Finish Tin/Lead (Sn/Pb) TIN LEAD
Base Number Matches 21 4
Package Description FLANGE MOUNT, R-PSFM-T3
HTS Code 8541.29.00.95
Additional Feature LEADFORM OPTIONS ARE AVAILABLE
Case Connection DRAIN
DS Breakdown Voltage-Min 500 V
Drain-source On Resistance-Max 3 Ω
Feedback Cap-Max (Crss) 40 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Power Dissipation Ambient-Max 75 W
Pulsed Drain Current-Max (IDM) 10 A
Qualification Status Not Qualified
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 140 ns
Turn-on Time-Max (ton) 55 ns

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