IRF821 vs IRF821 feature comparison

IRF821 International Rectifier

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IRF821 STMicroelectronics

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP STMICROELECTRONICS
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
Case Connection DRAIN
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 450 V 450 V
Drain Current-Max (ID) 2.5 A 3 A
Drain-source On Resistance-Max 3 Ω 4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB TO-220AB
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 50 W 50 W
Pulsed Drain Current-Max (IDM) 8 A 12 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish TIN LEAD TIN LEAD
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Element Material SILICON SILICON
Base Number Matches 23 2
Part Package Code SFM
Package Description TO-220, 3 PIN
Pin Count 3
HTS Code 8541.29.00.95
Additional Feature HIGH VOLTAGE, FAST SWITCHING
Avalanche Energy Rating (Eas) 225 mJ
Feedback Cap-Max (Crss) 50 pF
Power Dissipation Ambient-Max 75 W
Transistor Application SWITCHING
Turn-off Time-Max (toff) 245 ns
Turn-on Time-Max (ton) 137 ns

Compare IRF821 with alternatives

Compare IRF821 with alternatives