IRF822
vs
MTP3N50E
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
SAMSUNG SEMICONDUCTOR INC
|
ON SEMICONDUCTOR
|
| Part Package Code |
SFM
|
|
| Package Description |
TO-220, 3 PIN
|
FLANGE MOUNT, R-PSFM-T3
|
| Pin Count |
3
|
|
| Reach Compliance Code |
unknown
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.95
|
|
| Avalanche Energy Rating (Eas) |
210 mJ
|
210 mJ
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
500 V
|
500 V
|
| Drain Current-Max (ID) |
2.2 A
|
3 A
|
| Drain-source On Resistance-Max |
4 Ω
|
3 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-220AB
|
TO-220AB
|
| JESD-30 Code |
R-PSFM-T3
|
R-PSFM-T3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation Ambient-Max |
50 W
|
|
| Power Dissipation-Max (Abs) |
50 W
|
50 W
|
| Pulsed Drain Current-Max (IDM) |
7 A
|
1 A
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Turn-off Time-Max (toff) |
60 ns
|
|
| Turn-on Time-Max (ton) |
33 ns
|
|
| Base Number Matches |
1
|
1
|
| Rohs Code |
|
No
|
| Additional Feature |
|
AVALANCHE RATED
|
| Case Connection |
|
DRAIN
|
| JESD-609 Code |
|
e0
|
| Peak Reflow Temperature (Cel) |
|
235
|
| Terminal Finish |
|
TIN LEAD
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
Compare IRF822 with alternatives
Compare MTP3N50E with alternatives