IRF830ALPBF
vs
IRFSL11N50APBF
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Transferred
|
Transferred
|
Ihs Manufacturer |
VISHAY SILICONIX
|
VISHAY SILICONIX
|
Part Package Code |
TO-262AA
|
TO-262AA
|
Package Description |
IN-LINE, R-PSIP-T3
|
ROHS COMPLIANT, TO-262, I2PAK-3
|
Pin Count |
3
|
3
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Samacsys Manufacturer |
Vishay
|
Vishay
|
Avalanche Energy Rating (Eas) |
230 mJ
|
390 mJ
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
500 V
|
500 V
|
Drain Current-Max (ID) |
5 A
|
11 A
|
Drain-source On Resistance-Max |
1.4 Ω
|
0.55 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-262AA
|
TO-262AA
|
JESD-30 Code |
R-PSIP-T3
|
R-PSIP-T3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
IN-LINE
|
IN-LINE
|
Peak Reflow Temperature (Cel) |
260
|
NOT SPECIFIED
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
20 A
|
44 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
NO
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
40
|
NOT SPECIFIED
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Additional Feature |
|
AVALANCHE RATED
|
Case Connection |
|
DRAIN
|
|
|
|
Compare IRF830ALPBF with alternatives
Compare IRFSL11N50APBF with alternatives