IRF841 vs 2SK1009-01 feature comparison

IRF841 National Semiconductor Corporation

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2SK1009-01 Fuji Electric Co Ltd

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Rohs Code No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer NATIONAL SEMICONDUCTOR CORP COLLMER SEMICONDUCTOR INC
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE
Drain Current-Max (ID) 8 A 7 A
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e0
Number of Elements 1 1
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 125 W
Surface Mount NO NO
Terminal Finish Tin/Lead (Sn/Pb)
Base Number Matches 17 1
Package Description FLANGE MOUNT, R-PSFM-T3
HTS Code 8541.29.00.95
Additional Feature AVALANCHE RATED
DS Breakdown Voltage-Min 450 V
Drain-source On Resistance-Max 1.3 Ω
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Power Dissipation Ambient-Max 80 W
Qualification Status Not Qualified
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Element Material SILICON
Turn-off Time-Max (toff) 200 ns
Turn-on Time-Max (ton) 110 ns

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